The Japan Society of Applied Physics

11:00 〜 13:30

[PS-2-15] Ge Surface Channel Formed by Different Temperature Processes on Characteristics of Poly-Si Charge-Trapping Flash Memory Devices

C.C. Su1, K.S. Chang-Liao1, H.K. Fang1, Y.C. Yu1, W.H. Huang2, C.H. Shen2, J.M. Hsieh2 (1.National Tsing Hua University (Taiwan), 2.National Nano Device Laboratories (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-2-15