Ge Surface Channel Formed by Different Temperature Processes on Characteristics of Poly-Si Charge-Trapping Flash Memory Devices

C.C. Su

doi:https://doi.org/10.7567/SSDM.2018.PS-2-15

11:00 〜 13:30

[PS-2-15] Ge Surface Channel Formed by Different Temperature Processes on Characteristics of Poly-Si Charge-Trapping Flash Memory Devices

^○C.C. Su¹, K.S. Chang-Liao¹, H.K. Fang¹, Y.C. Yu¹, W.H. Huang², C.H. Shen², J.M. Hsieh² (1.National Tsing Hua University (Taiwan), 2.National Nano Device Laboratories (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-2-15

2018 International Conference on Solid State Devices and Materials

[PS-2-15] Ge Surface Channel Formed by Different Temperature Processes on Characteristics of Poly-Si Charge-Trapping Flash Memory Devices