High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure

Y.C. Liang

doi:https://doi.org/10.7567/SSDM.2018.PS-3-08

11:00 〜 13:30

[PS-3-08] High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure

^○Y.C. Liang^1,2, K. Ren¹, S.J. Chua¹, Z. Wang¹, X. Gong¹ (1.National University of Singapore (Singapore), 2.National University of Singapore, Suzhou Research Institute (China))

https://doi.org/10.7567/SSDM.2018.PS-3-08

2018 International Conference on Solid State Devices and Materials

[PS-3-08] High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure