The Japan Society of Applied Physics

11:00 〜 13:30

[PS-4-06] High-Breakdown Voltage Low-leakage Current AlGaN GaN HEMT with Peridodically C-doped GaN Buffer and AlGaN Back Barrier

J. Lee1, J.M. Ju1, G. Atmaca2, J.G. Kim1, S.H. Kang1, T. Thingujam1, Y.S. Lee1, J.H. Lee1 (1.Kyungpook National Univ. (Korea), 2.Gazi Univ. (Turkey))

https://doi.org/10.7567/SSDM.2018.PS-4-06