High-Breakdown Voltage Low-leakage Current AlGaN GaN HEMT with Peridodically C-doped GaN Buffer and AlGaN Back Barrier

J. Lee

doi:https://doi.org/10.7567/SSDM.2018.PS-4-06

11:00 〜 13:30

[PS-4-06] High-Breakdown Voltage Low-leakage Current AlGaN GaN HEMT with Peridodically C-doped GaN Buffer and AlGaN Back Barrier

^○J. Lee¹, J.M. Ju¹, G. Atmaca², J.G. Kim¹, S.H. Kang¹, T. Thingujam¹, Y.S. Lee¹, J.H. Lee¹ (1.Kyungpook National Univ. (Korea), 2.Gazi Univ. (Turkey))

https://doi.org/10.7567/SSDM.2018.PS-4-06

2018 International Conference on Solid State Devices and Materials

[PS-4-06] High-Breakdown Voltage Low-leakage Current AlGaN GaN HEMT with Peridodically C-doped GaN Buffer and AlGaN Back Barrier