Fabrication of In<sub>0.53</sub>Ga<sub>0.47</sub>As homo-junction TFET with optimized gate stack by employing surface treatment and post metallization annealing

M.W. Kong

doi:https://doi.org/10.7567/SSDM.2018.PS-4-10

11:00 AM - 1:30 PM

[PS-4-10] Fabrication of In_0.53Ga_0.47As homo-junction TFET with optimized gate stack by employing surface treatment and post metallization annealing

^○M.W. Kong^1,2, S.K. Eom^1,2, C.H. Lee^1,2, H.Y. Cha³, K.S. Seo¹ (1.Seoul National Univ. (Korea), 2.Inter-Univ. Semiconductor Res. Center (Korea), 3.Hongik Univ. (Korea))

https://doi.org/10.7567/SSDM.2018.PS-4-10

2018 International Conference on Solid State Devices and Materials

[PS-4-10] Fabrication of In0.53Ga0.47As homo-junction TFET with optimized gate stack by employing surface treatment and post metallization annealing

[PS-4-10] Fabrication of In_0.53Ga_0.47As homo-junction TFET with optimized gate stack by employing surface treatment and post metallization annealing