The Japan Society of Applied Physics

11:00 AM - 1:30 PM

[PS-4-13 (Late News)] Reuse process of sapphire substrates for GaN epitaxial growth using laser lift-off technique

I. Watanabe1, S. Tabata2, K. Takahashi2, A. Kasamatsu1 (1.NICT (Japan), 2.DISCO Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-13