High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

K. Horikawa

doi:https://doi.org/10.7567/SSDM.2018.PS-4-15

11:00 AM - 1:30 PM

[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

^○K. Horikawa¹, A. Hiraiwa^2,3,4, S. Okubo¹, T. Kageura¹, H. Kawarada^1,2,3 (1.Waseda Univ. (Japan), 2.RONL, Waseda Univ. (Japan), 3.KMRIMST, Waseda Univ. (Japan), 4.IMaSS, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-15

2018 International Conference on Solid State Devices and Materials

[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition