Warpage Reduction of Thick 4H-SiC Epitaxial Layers on the Substrates

K. Masumoto

doi:https://doi.org/10.7567/SSDM.2018.PS-4-16

11:00 〜 13:30

[PS-4-16] Warpage Reduction of Thick 4H-SiC Epitaxial Layers on the Substrates

^○K. Masumoto¹, S. Segawa^1,2, T. Ohno³, S. Tsukimoto^1,4, K. Kojima¹, T. Kato¹, H. Okumura¹ (1.AIST (Japan), 2.Asahi Diamond Indus. Corp., Ltd. (Japan), 3.Hitachi, Ltd. (Japan), 4.JFE Techno-Research Co. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-16

2018 International Conference on Solid State Devices and Materials

[PS-4-16] Warpage Reduction of Thick 4H-SiC Epitaxial Layers on the Substrates