The Japan Society of Applied Physics

11:00 〜 13:30

[PS-4-17] Estimation of Border Trap Distribution in Electron Irradiated SiC MOS Capacitor Using High Temperature 1M Hz C-V Method

Z. Peng1,2,J. Hao1,2, S. Wang1,2,3, Y. Bai1,2, Y. Tang2,1, X. Liu1,2 (1.Institute of Microelectronics of Chinese Academy of Sciences (China), 2.Universty of Chinese Academy of Sciences (China), 3.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2018.PS-4-17