11:00 〜 13:30

[PS-4-17] Estimation of Border Trap Distribution in Electron Irradiated SiC MOS Capacitor Using High Temperature 1M Hz C-V Method

Z. Peng^1,2,^○J. Hao^1,2, S. Wang^1,2,3, Y. Bai^1,2, Y. Tang^2,1, X. Liu^1,2 (1.Institute of Microelectronics of Chinese Academy of Sciences (China), 2.Universty of Chinese Academy of Sciences (China), 3.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2018.PS-4-17