Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs

D.S. Chao

doi:https://doi.org/10.7567/SSDM.2018.PS-4-19

11:00 AM - 1:30 PM

[PS-4-19 (Late News)] Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs

^○D.S. Chao¹, H.Y. Shih², J.Y. Jiang², C.F. Huang², C.Y. Chiang³, C.S. Ku³, K.Y. Lee⁴ (1.Nuclear Sci. and Tech. Development Center, National Tsing Hua Univ. (Taiwan), 2.Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan), 3.National Synchrotron Radiation Res. Center (Taiwan), 4.Department of Eng. Sci. and Ocean Eng., National Taiwan Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-4-19

2018 International Conference on Solid State Devices and Materials

[PS-4-19 (Late News)] Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs