First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

T. Nagura

doi:https://doi.org/10.7567/SSDM.2018.PS-4-20

11:00 〜 13:30

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

^○T. Nagura¹, K. Chokawa¹, M. Araidai^1,2, T. Hosoi³, H. Watanabe³, A. Oshiyama², K. Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Graduate School of Engineering, Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-20

2018 International Conference on Solid State Devices and Materials

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current