TiN on ITO/glass substrate for pH-sensitive extended gate field-effect transistors

Y.F. Chen

doi:https://doi.org/10.7567/SSDM.2018.PS-7-05

11:00 〜 13:30

[PS-7-05] TiN on ITO/glass substrate for pH-sensitive extended gate field-effect transistors

^○Y.F. Chen¹, C.H. Chen², J.R. Tsai³, C.M. Yang^1,2,4,5 (1.Institute of Electro-Optical Eng., Chang Gung Univ. (Taiwan), 2.Department of Electronic Eng., Chang Gung Univ. (Taiwan), 3.Department of Photonics and Communication Eng., Asia Univ. (Taiwan), 4.Biosensor Group, Biomedical Eng. Research Center, Chang Gung Univ. (Taiwan), 5.Department of General Surgery, Chang Gung Memorial Hospital at Linkou (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-7-05

2018 International Conference on Solid State Devices and Materials

[PS-7-05] TiN on ITO/glass substrate for pH-sensitive extended gate field-effect transistors