11:00 〜 13:30

[PS-8-12] Graphene-Base Hot Electron Transistor with Schottky Emitter Junction Fabricated by Semiconductor Membrane Transfer

^○C. Liu¹, W. Ma¹, M. Chen¹, W. Ren¹, H. Cheng¹, D. Sun¹ (1.Inst. of Metal Res., CAS (China))

https://doi.org/10.7567/SSDM.2018.PS-8-12