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[PS-8-12] Graphene-Base Hot Electron Transistor with Schottky Emitter Junction Fabricated by Semiconductor Membrane Transfer

^○C. Liu¹, W. Ma¹, M. Chen¹, W. Ren¹, H. Cheng¹, D. Sun¹ (1.Inst. of Metal Res., CAS (China))

https://doi.org/10.7567/SSDM.2018.PS-8-12