The Japan Society of Applied Physics

11:00 〜 13:30

[PS-8-26 (Late News)] Strong p-type SnS FETs: From Bulk to Monolayer

N. Higashitarumizu1, H. Kawamoto1, K. Maruyama1, M. Nakamura2, K. Shimamura2, N. Ohashi2, K. Ueno3, K. Nagashio1 (1.Univ. of Tokyo (Japan), 2.NIMS (Japan), 3.Saitama Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-8-26