11:00 AM - 1:30 PM

[PS-9-14] Inserted-cation-dependent Device Characteristic of SrVO₃-based All-solid-state Redox Transistor

^○M. Takayanagi^1,2, T. Tsuchiya¹, W. Namiki^1,2, T. Higuchi², K. Terabe¹ (1.NIMS (Japan), 2.Tokyo Univ. Sci. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-9-14