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[PS-9-23 (Late News)] Conductive filaments controlled ferromagnetism in Co-doped ZnO resistive switching memory device

^○S.S. Li¹, Y.K. Su^1,2 (1.National Cheng Kung Univ. (Taiwan), 2.Kun Shan Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-9-23