2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:32 〜 16:33

[PS-1-03] Resonance-enhanced Tunneling Current through Doped Si-p/n Junction; Theoretical Study

^○S. Cho¹, S. Iizuka², T. Nakayama¹ (1.Chiba Univ. (Japan), 2.NIMS (Japan))

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