2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:47 〜 16:48

[PS-1-18] High Performance NiGe/n-Ge Junctions and pMOSFETs Fabricated with Dopant Segregation

^○S. Yuan¹, J. Li¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang University (China))

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