Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments

T. Kanashima

16:53 〜 16:54

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La₂O₃ high-k/Ge(111) Gate Stacks by Wet Treatments

^○T. Kanashima¹, H. Furusho¹, K. Takayama¹, H. Nohira², K. Yamamoto³, H. Nakashima³ (1.Osaka Univ. (Japan), 2.Tokyo City Univ. (Japan), 3.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La₂O₃ high-k/Ge(111) Gate Stacks by Wet Treatments