2018 International Conference on Solid State Devices and Materials
Sep 9, 2018 - Sep 13, 2018 University of Tokyo
4:55 PM - 4:56 PM
[PS-1-26 (Late News)] Read Static Noise Margin Fluctuation Induced by Various Random Discrete Dopants on 6T SRAM with Nanowire FET (NWFET) and Hybrid FinFET-NWFET Cells
○W.L. Sung1, Y. Li1 (1.National Chiao Tung University (Taiwan))
