2018 International Conference on Solid State Devices and Materials
2018年9月9日 〜 2018年9月13日 University of Tokyo
16:55 〜 16:56
[PS-1-26 (Late News)] Read Static Noise Margin Fluctuation Induced by Various Random Discrete Dopants on 6T SRAM with Nanowire FET (NWFET) and Hybrid FinFET-NWFET Cells
○W.L. Sung1, Y. Li1 (1.National Chiao Tung University (Taiwan))
