16:55 〜 16:56

[PS-11-01] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy

^○Y. Kobayashi¹, K. Nakata¹, H. Nakazawa¹, H. Okamoto¹, M. Hiroki², K. Kumakura² (1.Hirosaki Univ. (Japan), 2.NTT Basic Res. Lab. (Japan))