2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

4:35 PM - 4:36 PM

[PS-2-06] Material Design of In₃SbTe₂ for Fast Switching Phase Change Memory

Y.T. Kim¹,^○Y.M. Jhon¹, S. Kwon², J. Ahn² (1.Korea Institute of Science & Tech. (Korea), 2.Hanyang Univ. (Korea))

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