16:33 〜 16:34 [PS-4-04] Origin of Border Traps in Normally-off Al2O3/GaN MOSFET with Different Gate Recess Techniques ○R. Yin1, Y. Li1, Y. Sun1, C.P. Wen1, Y.L. Hao1, M.J. Wang1 (1.Peking Univ. (China))
