16:41 〜 16:42
[PS-4-12 (Late News)] Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique
○Y.D. Jin1, H.Q. Luc1, W.J. Lin1, S.K. Yang1, Y.K. Zhang1, B.H. Do1, H.S. Huynh1, H.M.T. Ha1, P. Huang1, W.C. Hsu1, C.Y. Lin1, E.Y. Chang1
(1.National Chiao Tung Univ. (Taiwan))