16:42 〜 16:43 [PS-4-13 (Late News)] Reuse process of sapphire substrates for GaN epitaxial growth using laser lift-off technique ○I. Watanabe1, S. Tabata2, K. Takahashi2, A. Kasamatsu1 (1.NICT (Japan), 2.DISCO Corp. (Japan))
