4:45 PM - 4:46 PM
[PS-4-16] Warpage Reduction of Thick 4H-SiC Epitaxial Layers on the Substrates
○K. Masumoto1, S. Segawa1,2, T. Ohno3, S. Tsukimoto1,4, K. Kojima1, T. Kato1, H. Okumura1
(1.AIST (Japan), 2.Asahi Diamond Indus. Corp., Ltd. (Japan), 3.Hitachi, Ltd. (Japan), 4.JFE Techno-Research Co. (Japan))