First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

T. Nagura

16:49 〜 16:50

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

^○T. Nagura¹, K. Chokawa¹, M. Araidai^1,2, T. Hosoi³, H. Watanabe³, A. Oshiyama², K. Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Graduate School of Engineering, Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current