16:50 〜 16:51

[PS-4-21 (Late News)] InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics

^○H.Q. Luc¹, Y.K. Zhang¹, D.Y. Jin¹, H.S. Huynh¹, H.M.T. Ha¹, B.H. Do¹, P. Huang¹, W.C. Hsu¹, C.Y. Lin¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))