The Japan Society of Applied Physics

16:52 〜 16:53

[PS-4-23 (Late News)] Process Damage Influence for Electrical Property of Diamond Schottky Barrier Diodes

T. Murooka1, K. Takizawa2, Y. Kato3, T. Makino3, M. Ogura3, H. Kato3, R. Wada2, S. Yamasaki3, T. Iwasaki1, H. Nohira2, M. Hatano1 (1.Tokyo Tech (Japan), 2.Tokyo City Univ. (Japan), 3.AIST (Japan))