The Japan Society of Applied Physics

4:41 PM - 4:42 PM

[PS-8-12] Graphene-Base Hot Electron Transistor with Schottky Emitter Junction Fabricated by Semiconductor Membrane Transfer

C. Liu1, W. Ma1, M. Chen1, W. Ren1, H. Cheng1, D. Sun1 (1.Inst. of Metal Res., CAS (China))