16:41 〜 16:42 [PS-8-12] Graphene-Base Hot Electron Transistor with Schottky Emitter Junction Fabricated by Semiconductor Membrane Transfer ○C. Liu1, W. Ma1, M. Chen1, W. Ren1, H. Cheng1, D. Sun1 (1.Inst. of Metal Res., CAS (China))
