2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:53 〜 16:54

[PS-8-24 (Late News)] New Buckled Structures of Bilayer GaN and their Properties.

^○A.K.A. Lu¹, T. Yayama¹, T. Morishita¹, T. Nakanishi¹ (1.AIST (Japan))

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