2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

4:53 PM - 4:54 PM

[PS-8-24 (Late News)] New Buckled Structures of Bilayer GaN and their Properties.

^○A.K.A. Lu¹, T. Yayama¹, T. Morishita¹, T. Nakanishi¹ (1.AIST (Japan))

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