16:36 〜 16:37

[PS-9-07] Epitaxial Growth of Sb-doped Ge Layers on Ferromagnetic Fe₃Si for Vertical Semiconductor Spintronic Devices

^○T. Shiihara¹, S. Oki¹, S. Sakai¹, M. Ikawa¹, S. Yamada¹, K. Hamaya¹ (1.Osaka Univ. (Japan))