2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

4:43 PM - 4:44 PM

[PS-9-14] Inserted-cation-dependent Device Characteristic of SrVO₃-based All-solid-state Redox Transistor

^○M. Takayanagi^1,2, T. Tsuchiya¹, W. Namiki^1,2, T. Higuchi², K. Terabe¹ (1.NIMS (Japan), 2.Tokyo Univ. Sci. (Japan))

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