[D-3-01 (Invited)] Diamond Electronics: Past Perspectives and Future Prospects

^○H. Umezawa^1,2 (1.AIST (Japan), 2.CNRS/Université Grenoble Alpes (France))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:00 AM - 9:30 AM |PDF Download

[D-3-02] Diamond pseudo-vertical Schottky barrier diodes fabricated on mosaic wafers

^○S. Ohmagari¹, H. Yamada¹, H. Umezawa¹, N. Tsubouchi¹, A. Chayahara¹, A. Seki², F. Kawaii², H. Saitoh², Y. Mokuno¹ (1.AIST (Japan), 2.Toyota Motor Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:30 AM - 9:45 AM |PDF Download

[D-3-03] Floating Field Rings for Pseudo-Vertical Diamond Schottky Barrier Diodes

^○K. Driche^1,2,3, A. Maréchal¹, H. Umezawa^1,4, J. Letellier¹, D. Eon¹, N. Rouger⁵, E. Gheeraert^1,2, H. Okumura^2,3 (1.Univ. Grenoble Alpes, CNRS, Grenoble INP, Inst. NEEL, G2Elab (France), 2.Graduate School of Pure and Applied Science, Univ. of Tsukuba (Japan), 3.Diamond Device Team, ADPERC, AIST (Japan), 4.Diamond Material Team, ADPERC, AIST (Japan), 5.LAPLACE, Univ. de Toulouse, CNRS (France))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:45 AM - 10:00 AM |PDF Download

[D-3-04] Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure

^○M. Iwataki¹, N. Oi¹, K. Horikawa¹, S. Amano¹, T. Kageura¹, M. Inaba², A. Hiraiwa^1,3, H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:00 AM - 10:15 AM |PDF Download

[D-3-05] Normally-Off 2DHG Diamond Al₂O₃/SiO₂ MOSFETs without Deteriorating Drain Current Density

^○T. Yabe¹, N. Oi¹, J.J. Buendia¹, S. Okubo¹, K. Horikawa¹, T. Kageura¹, S. Kono¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda Univ. (Japan), 2.Kagami Memorial Research Institute for Materials Science and Technology (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:15 AM - 10:30 AM |PDF Download

[D-4-01 (Invited)] Evolution and Prospects of Gallium Oxide-Based Materials and Power Devices

^○S. Fujita¹ (1.Kyoto Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:45 AM - 11:15 AM |PDF Download

[D-4-02] Demonstration of beta-(AlGa)₂O₃ (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V

^○H. Okumura¹, Y. Kato², T. Oshima², T. Palacios³ (1.Univ. of Tsukuba (Japan), 2.Saga Univ. (Japan), 3.MIT (USA))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:15 AM - 11:30 AM |PDF Download

[D-4-03] Normally-off H-diamond field effect transistors based on the multiple enlarged growth single crystalline diamond by microwave plasma chemical vapor deposition

^○Z. Ren¹, J. Zhang¹, J. Zhang¹, K. Su¹, Y. Hao¹ (1.Univ. of Xidian (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:30 AM - 11:45 AM |PDF Download

[D-4-04] Improved drain current of diamond metal-semiconductor FET by selectively grown P+ contact layer

^○H. Kawashima¹, H. Umezawa¹, S. Ohmagari¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:45 AM - 12:00 PM |PDF Download

[D-5-01 (Invited)] Advances in InP Double Heterojunction Bipolar Transistors

^○C.R. Bolognesi¹, A.M. Arabhavi¹, W. Quan¹, O. Ostinelli¹, X. Wen², M. Luisier² (1.ETH Zurich, MWE Group (Switzerland), 2.ETH Zurich, Integrated Systems Lab. (Switzerland))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 1:30 PM - 2:00 PM |PDF Download