The Japan Society of Applied Physics

[PS-4-17] Estimation of Border Trap Distribution in Electron Irradiated SiC MOS Capacitor Using High Temperature 1M Hz C-V Method

Z. Peng1,2,J. Hao1,2, S. Wang1,2,3, Y. Bai1,2, Y. Tang2,1, X. Liu1,2 (1.Institute of Microelectronics of Chinese Academy of Sciences (China), 2.Universty of Chinese Academy of Sciences (China), 3.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:46 PM - 4:47 PM |PDF Download

[PS-4-18] Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface

T. Doi1,2, W. Takeuchi1,3, M. Sakashita1, N. Taoka2, O. Nakatsuka1,4, S. Zaima5 (1.Grad. Sch. of Eng., Nagoya Univ. (Japan), 2.AIST-NU GaN-OIL (Japan), 3.Aichi Inst. of Tech. (Japan), 4.IMaSS, Nagoya Univ. (Japan), 5.Inst. of innovation for Future Society, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:47 PM - 4:48 PM |PDF Download

[PS-4-19 (Late News)] Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs

D.S. Chao1, H.Y. Shih2, J.Y. Jiang2, C.F. Huang2, C.Y. Chiang3, C.S. Ku3, K.Y. Lee4 (1.Nuclear Sci. and Tech. Development Center, National Tsing Hua Univ. (Taiwan), 2.Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan), 3.National Synchrotron Radiation Res. Center (Taiwan), 4.Department of Eng. Sci. and Ocean Eng., National Taiwan Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:48 PM - 4:49 PM |PDF Download

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

T. Nagura1, K. Chokawa1, M. Araidai1,2, T. Hosoi3, H. Watanabe3, A. Oshiyama2, K. Shiraishi1,2 (1.Graduate School of Engineering, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Graduate School of Engineering, Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:49 PM - 4:50 PM |PDF Download