The Japan Society of Applied Physics

[C-3-05] Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices

A. Vohra1,2, C. Porret2, D. Kohen3, S. Folkersma1,2, J. Bogdanowicz2, M. Schaekers2, J. Tolle3, A. Hikavyy2, E. Capogreco2, L. Witters2, R. Langer2, W. Vandervorst1,2,R. Loo2 (1.K.U. Leuven (Belgium), 2.Imec (Belgium), 3.ASM (United States Minor Outlying Islands))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:15 AM - 10:30 AM |PDF Download

[C-4-01] Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles

K.-T. Chen1, C.-Y. Liao1, R.-C. Hong1, S.-S. Gu1, Y.-C. Chou1, Z.-Y. Wang1, S.-Y. Chen1, G.-Y. Siang1, H.-Y. Chen1, C. Lo1, P.-G. Chen3, Y.-J. Lee1, M.-H. Liao2, K.-S. Li3, S.T. Chang4,M.-H. Lee1 (1.National Taiwan Normal Univ. (Taiwan), 2.National Taiwan Univ. (Taiwan), 3.National Nano Device Lab. (Taiwan), 4.National Chung Hsing Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:45 AM - 11:00 AM |PDF Download

[C-4-05 (Late News)] A Novel Experimental Approach to Extracting Negative Capacitances: Newly found Negative DIBL Effect in 14nm NC-FinFET and the Way to Achieve Hysteresis-free

Y.C. Luo1,E.R. Hsieh2, C.J. Su3, S. Chung2, T.P. Chen4, S.A. Huang4, T.J. Chen4, O. Cheng4 (1.National Tsing Hua University (Taiwan), 2.National Chiao Tung University (Taiwan), 3.National NanoDevice Lab. (Taiwan), 4.UMC (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:45 AM - 12:00 PM |PDF Download