[PS-8-20] Mo₂C/MoS₂ Lateral Heterostructure formed by Chemical Conversion of Molybdenum Disulfide

^○C. Seunghyuk¹, J. Jeon¹, Y.J. Song¹, J.H. Cho¹, S. Lee¹ (1.Sungkyunkwan Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-8-21] Fabrication of Molybdenum disulfide (MoS₂) with environmental-friendly by atmospheric-pressure solution-based mist CVD

^○S. Sato¹, N. Nitta^2,5, M. Sakamoto³, D.T. Giang⁵, E.K.C. Pradeep⁴, L. Liu¹, R. Phimolphan¹, M. Nishi³, M. Ueda³, T. Kawaharamura^1,3,5 (1.Eng. Course, Kochi Univ. of Technol. (Japan), 2.Mater. Sci. and Eng. Course, Kochi Univ. of Technol. (Japan), 3.Intelligent Mech. Sys. Eng. Course, Kochi Univ. of Technol. (Japan), 4.Faculty of Technol., Univ. of Ruhuna (Sri Lanka), 5.Center for Nanotechnology, Research Institute, Kochi Univ. of Technol. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-8-22] Withdrawn

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30

[PS-8-23 (Late News)] Withdrawn

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30

[PS-8-24 (Late News)] New Buckled Structures of Bilayer GaN and their Properties.

^○A.K.A. Lu¹, T. Yayama¹, T. Morishita¹, T. Nakanishi¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-8-25 (Late News)] Doping-induced large anisotropic spin splitting and persistent spin helix in monolayer SnSe

^○M.A.U. Absor¹, F. Ishii² (1.Gadjah Mada University (Indonesia), 2.Kanazawa University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-8-26 (Late News)] Strong p-type SnS FETs: From Bulk to Monolayer

^○N. Higashitarumizu¹, H. Kawamoto¹, K. Maruyama¹, M. Nakamura², K. Shimamura², N. Ohashi², K. Ueno³, K. Nagashio¹ (1.Univ. of Tokyo (Japan), 2.NIMS (Japan), 3.Saitama Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-8-27 (Late News)] Novel InAs/GaSb Heterostructure Nanowire Based Tunnel Field Effect Transistor

^○R.K. Kakkerla¹, S.K. Singh¹, H.B. Joseph³, A. Gupta², D. Anandan¹, V. Nagarajan¹, H.W. Yu¹, E.Y. Chang¹ (1.National Chiao Tung University (Taiwan), 2.Indian Institute of Technology Delhi (India), 3.SRM University (India))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-9-01] Electric field effect on magnetic moment in Pd with solid-state gating

^○A. Obinata¹, T. Hirai¹, T. Koyama¹, D. Chiba¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-9-02] Mechanism of Electric Field Effect on Magnetism in Surface-Oxidized Co/Oxide Dielectric Layer

^○T. Hirai¹, T. Koyama¹, D. Chiba¹ (1.The University of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード