Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver

J. Fujikata

doi:https://doi.org/10.7567/SSDM.2019.B-2-02

4:15 PM - 4:30 PM

[B-2-02] Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver

^○J. Fujikata¹, J. Han², S. Takahashi¹, K. Kawashita³, H. Ono¹, S.-H. Jeong¹, Y. Ishikawa³, M. Takenaka², T. Nakamura¹ (1.PETRA (Japan), 2.Univ. of Tokyo (Japan), 3.Toyohashi Univ. Tech. (Japan))

https://doi.org/10.7567/SSDM.2019.B-2-02

2019 International Conference on Solid State Devices and Materials

[B-2-02] Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver