11:00 〜 11:15

[B-6-03] Characteristics of GaN-based VCSELs with conducting AlInN/GaN DBR

^○R. Iida¹, W. Muranaga¹, S. Iwayama¹, T. Takeuchi¹, S. Kamiyama¹, M. Iwaya¹, I. Akasaki^1,2 (1.Meijo Univ. (Japan), 2.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.B-6-03