14:45 〜 15:00

[C-1-04] Thermoelectric p-type Ge Film Formed by Zn-induced Layer Exchange at 80 °C

^○M. Tsuji¹, K. Kusano¹, T. Suemasu¹, K. Toko^1,2 (1.Univ. of Tsukuba (Japan), 2.PRESTO (Japan))

https://doi.org/10.7567/SSDM.2019.C-1-04