Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

Y. Hayashi

doi:https://doi.org/10.7567/SSDM.2019.C-6-02

11:00 〜 11:15

[C-6-02] Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

^○Y. Hayashi¹, T. Kamioka^1,3, K. Gotoh², R. Ozaki¹, K. Nakamura¹, M. Morimura¹, S. Naitou¹, N. Usami², A. Ogura³, Y. Ohshita¹ (1.Toyota Technological Institute (Japan), 2.Nagoya Univ. (Japan), 3.Meiji Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.C-6-02

2019 International Conference on Solid State Devices and Materials

[C-6-02] Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell