15:15 〜 15:30
[D-1-05] Large linear magnetoresistance effect in high-quality InSb nanosheets
○S. Tong1,2, D. Pan1,2, X. Wang1,2, D. Wei1,2, J. Zhao1,2
(1.Inst. of Semiconductors, CAS (China), 2.Univ. of CAS (China))
https://doi.org/10.7567/SSDM.2019.D-1-05