Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires

T. Takahashi

doi:https://doi.org/10.7567/SSDM.2019.D-5-04

10:00 AM - 10:15 AM

[D-5-04 (Late News)] Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires

^○T. Takahashi^1,2, K. Kawaguchi^1,2, M. Sato^1,2, M. Suhara³, N. Okamoto^1,2 (1.Fujitsu Ltd. (Japan), 2.Fujitsu Labs. Ltd. (Japan), 3.Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.D-5-04

2019 International Conference on Solid State Devices and Materials

[D-5-04 (Late News)] Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires