Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface

M. Kobayashi

doi:https://doi.org/10.7567/SSDM.2019.F-4-03

16:15 〜 16:30

[F-4-03] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface

^○M. Kobayashi¹, A. Ohta¹, M. Kurosawa¹, M. Araidai¹, M. Ikeda¹, N. Taoka¹, T. Shimizu², K. Makihara¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.Kansai Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.F-4-03

2019 International Conference on Solid State Devices and Materials

[F-4-03] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface